? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 600 v v dgr t j = 25 c to 150 c, r gs = 1m 600 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c10 a i dm t c = 25 c, pulse width limited by t jm 25 a i a t c = 25 c10 a e as t c = 25 c 500 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g n-channel enhancement mode avalanche rated fast intrinsic rectifier ixta10n60p IXTP10N60P v dss = 600v i d25 = 10a r ds(on) 740m ds99330f(04/10) g = gate d = drain s = source tab = drain to-263 aa (ixta) g d s to-220ab (ixtp) d (tab) g s d (tab) polar tm power mosfet symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 250 a 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 5 a t j = 125 c 50 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 740 m features z international standard packages z dynamic dv/dt rating z avalanche rated z fast intrinsic rectifier z low q g z low r ds(on) z low drain-to-tab capacitance z low package inductance advantages z easy to mount z space savings applications z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z uninterrupted power supplies z ac motor drives z high speed power switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixta10n60p IXTP10N60P symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 6 11 s c iss 1720 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 160 pf c rss 14 pf t d(on) 23 ns t r 27 ns t d(off) 65 ns t f 21 ns q g(on) 32 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 12 nc q gd 10 nc r thjc 0.62 c/w r thch to-220 0.50 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 10 a i sm repetitive, pulse width limited by t jm 30 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 500 ns notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5mm or less from the package body. resistive switching time v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = 10a, v gs = 0v -di/dt = 100a/ s, v r = 100v ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source to-220 outline to-263 outline
? 2010 ixys corporation, all rights reserved ixta10n60p IXTP10N60P fig. 1. output characteristics @ t j = 25oc 0 1 2 3 4 5 6 7 8 9 10 01234567 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 3. output characteristics @ t j = 125oc 0 1 2 3 4 5 6 7 8 9 10 012345678910111213 v ds - volts i d - amperes v gs = 10v 5v 6v fig. 4. r ds(on) normalized to i d = 5a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 10a i d = 5a fig. 5. r ds(on) normalized to i d = 5a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 0 5 10 15 20 25 i d - amperes r ds(on) - normalized t j = 125oc t j = 25oc v gs = 10v fig. 6. maximum drain current vs. case temperature 0 2 4 6 8 10 12 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta10n60p IXTP10N60P ixys ref: ixf_10n60p (4j)4-18-10-d fig. 7. input admittance 0 2 4 6 8 10 12 14 16 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 5 10 15 20 25 30 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 q g - nanocoulombs v gs - volts v ds = 300v i d = 5a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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